ITO-free metallization for interdigitated back contact silicon heterojunction solar cells

Effect of Surface Passivation on Si Heterojunction and Interdigitated Back Contact Solar Cells

Silicon surface passivation of hydrogenated silicon (Si:H) thin films deposited by RF and DC plasma process was investigated by measuring effective minority carrier lifetime (τeff) on Si <100> and <111> wafers and correlated with the silicon heterojunction (SHJ) cell performances in front emitter structure and interdigitated back contact (IBC) structure. Excellent surface passivation (τeff > 1 ...

a-Si/c-Si Heterojunction for Interdigitated Back Contact Solar Cell

Initial experimental and numerical simulation results for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, which combines the high voltage potential of heterojunction solar cells while avoiding the absorption losses and allowing high short circuit currents, are reported. Cells without intrinsic buffer layers were fabricated as a proof of concept. The cells with intrinsic...

Fabrication of Silicon Heterojunction Interdigitated Back-contacted (SHJ-IBC) solar cell

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Multicrystalline and Back Contact Buried Contact Silicon Solar Cells Dissertation

Heterojunction silicon microwire solar cells.

We report radial heterojunction solar cells of amorphous silicon on crystalline silicon microwires with high surface passivation. While the shortened collection path is exploited to increase the photocurrent, proper choice of the wire radius and the highly passivated surface prevent drastic decrease in the voltage due to high surface-to-volume ratio. The heterojunction is formed by depositing a...